| 摘要 |
An organic light emitting display device according to an embodiment of the present invention includes: a substrate; a semiconductor of a switching thin-film transistor (TFT), disposed on the substrate; a semiconductor of a driving TFT, disposed on the substrate and having at least one curved portion; a gate insulating layer covering the semiconductor of the switching TFT and the semiconductor of the driving TFT; a gate electrode of the switching TFT, formed on the gate insulating layer and overlapping the semiconductor of the switching TFT; a gate electrode of the switching TFT, formed on the gate insulating layer and overlapping the semiconductor of the driving TFT; an interlayer insulating layer covering the gate electrode of the switching TFT and the gate electrode of the driving TFT; a data line formed on the interlayer insulating layer, and electrically connected to the semiconductor of the swtichign TFT; and a first driving voltage line formed on the interlayer insulating layer. The first driving voltage line includes a first part extending in a first direction, and a second part wider than a width of the first part in a second direction perpendicular to the first direction. The second part overlaps the gate electrode of the driving TFT with the interlayer insulating layer interposed therebetween. The embodiment of present invention may provide an organic light emitting display device with reduced manufacturing cost by using at least one less mask by changing a pixel structure, and a manufacturing method thereof. |
