| 发明名称 |
MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a magnetoresistive element includes a first magnetic layer having an invariable magnetization, a second magnetic layer having a variable magnetization, and an insulating layer between the first and second magnetic layers. The insulating layer includes at least one of a nickel oxide, an iron oxide, a cobalt oxide, a manganese oxide, LaMnO3 and ZnFe2O4. |
| 申请公布号 |
US2016072052(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201414562087 |
申请日期 |
2014.12.05 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NOMA Kenji |
| 分类号 |
H01L43/10;H01L43/12 |
主分类号 |
H01L43/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetoresistive element comprising:
a first magnetic layer having an invariable magnetization; a second magnetic layer having a variable magnetization; and a first insulating layer between the first and second magnetic layer, the first insulating layer including at least one of a nickel oxide, an iron oxide, a cobalt oxide, a manganese oxide, LaMnO3 and ZnFe2O4. |
| 地址 |
Tokyo JP |
