INTEGRATED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

An integrated semiconductor device and method for fabricating the same are provided wherein the integrated semiconductor device comprises a substrate a first stress-inducing layer, a second stress-inducing layer and an integrated circuit layer. The first stress-inducing layer covers on the substrate. The second stress-inducing layer partially covers on the first stress-inducing layer. The integrated circuit layer is bonded over the substrate.

主权项

1. A method for fabricating an integrated semiconductor device, comprising steps as follows:
providing a first substrate; forming a first stress-inducing layer encapsulating the first substrate; forming a second stress-inducing layer covering on the first stress-inducing layer; removing a portion of the second stress-inducing layer in order to bend the first substrate into a bow-shape, wherein the step for removing a portion of the second stress-inducing layer comprises performing an etching process to remove a portion of the second stress-inducing layer that covers on the top surface of the substrate and retaining a portion of the second stress-inducing layer that covers on a bottom surface and sidewalls of the substrate; and bonding an integrated circuit layer onto a portion of the first substrate that is not covered by the second stress-inducing layer.