| 发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR PIECE, CIRCUIT BOARD AND ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR PIECE, AND METHOD FOR DESIGNING ETCHING CONDITION |
| 摘要 |
A method for producing a semiconductor piece includes forming a first groove portion of a front-surface-side groove by anisotropic dry etching from a front surface of a substrate, forming a second groove portion of the front-surface-side groove, the second groove portion being located below and in communication with the first groove portion and having a width wider than a width of the first groove portion, and thinning the substrate from a back surface of the substrate up to the second groove portion. The second groove portion is formed by changing an etching condition of the anisotropic dry etching during the formation of the front-surface-side groove so that the width of the second groove portion is wider than the width of the first groove portion. |
| 申请公布号 |
US2016071733(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514820038 |
申请日期 |
2015.08.06 |
| 申请人 |
FUJI XEROX CO., LTD. |
发明人 |
ONO Kenichi;IKOMA Hideyuki;KOMAGATA Shogo;MURATA Michiaki;OTSUKA Tsutomu |
| 分类号 |
H01L21/3065;H01L29/06;H01L21/683;H01L21/78 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a semiconductor piece, comprising:
forming a first groove portion of a front-surface-side groove by anisotropic dry etching from a front surface of a substrate; forming a second groove portion of the front-surface-side groove, the second groove portion being located below and in communication with the first groove portion and having a width wider than a width of the first groove portion; and thinning the substrate from a back surface of the substrate up to the second groove portion, wherein the second groove portion is formed by changing an etching condition of the anisotropic dry etching during the formation of the front-surface-side groove so that the width of the second groove portion is wider than the width of the first groove portion. |
| 地址 |
Tokyo JP |
