发明名称 ION IMPLANTATION SYSTEM AND PROCESS FOR ULTRASENSITIVE DETERMINATION OF TARGET ISOTOPES
摘要 A system and process are disclosed for ultrasensitive determination of target isotopes of analytical interest in a sample. Target isotopes may be implanted in an implant area on a high-purity substrate to pre-concentrate the target isotopes free of contaminants. A known quantity of a tracer isotope may also be implanted. Target isotopes and tracer isotopes may be determined in a mass spectrometer. The present invention provides ultrasensitive determination of target isotopes in the sample.
申请公布号 US2016071713(A1) 申请公布日期 2016.03.10
申请号 US201414482332 申请日期 2014.09.10
申请人 Farmer, III Orville T.;Liezers Martin 发明人 Farmer, III Orville T.;Liezers Martin
分类号 H01J49/04;H01J49/00;H01J37/317 主分类号 H01J49/04
代理机构 代理人
主权项 1. A method for ultrasensitive determination of a target isotope in a sample, the method comprising the steps of: implanting the target isotope onto the surface of a high-purity substrate to pre-concentrate the target isotope in a selected implant area of a selected size thereon substantially free of other sample matrix components and/or contaminants; implanting a known quantity of a selected tracer isotope on the selected implant area to form an isotope dilution standard in the solid phase on the surface of the high-purity substrate; ablating the implant area containing the target isotope and the tracer isotope; and determining the concentration of the target isotope at a detection limit of at least about 108 atoms per cm2 or lower.
地址 Kennewick WA US