发明名称 |
ION IMPLANTATION SYSTEM AND PROCESS FOR ULTRASENSITIVE DETERMINATION OF TARGET ISOTOPES |
摘要 |
A system and process are disclosed for ultrasensitive determination of target isotopes of analytical interest in a sample. Target isotopes may be implanted in an implant area on a high-purity substrate to pre-concentrate the target isotopes free of contaminants. A known quantity of a tracer isotope may also be implanted. Target isotopes and tracer isotopes may be determined in a mass spectrometer. The present invention provides ultrasensitive determination of target isotopes in the sample. |
申请公布号 |
US2016071713(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
US201414482332 |
申请日期 |
2014.09.10 |
申请人 |
Farmer, III Orville T.;Liezers Martin |
发明人 |
Farmer, III Orville T.;Liezers Martin |
分类号 |
H01J49/04;H01J49/00;H01J37/317 |
主分类号 |
H01J49/04 |
代理机构 |
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代理人 |
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主权项 |
1. A method for ultrasensitive determination of a target isotope in a sample, the method comprising the steps of:
implanting the target isotope onto the surface of a high-purity substrate to pre-concentrate the target isotope in a selected implant area of a selected size thereon substantially free of other sample matrix components and/or contaminants; implanting a known quantity of a selected tracer isotope on the selected implant area to form an isotope dilution standard in the solid phase on the surface of the high-purity substrate; ablating the implant area containing the target isotope and the tracer isotope; and determining the concentration of the target isotope at a detection limit of at least about 108 atoms per cm2 or lower. |
地址 |
Kennewick WA US |