| 摘要 |
An array substrate (semiconductor device) 11b is provided with an oxide semiconductor film 31 comprising an oxide semiconductor material, a first interlayer insulation film (first insulation film) 33 disposed on the upper layer-side of the oxide semiconductor film 31, and a hydrogen-containing second interlayer insulation film (second insulation film) 34 disposed on the upper layer-side of the first interlayer insulation film 33. The oxide semiconductor film 31 is configured such that capacitor wiring 22 constituting a part of the oxide semiconductor film 31 is a low-resistance part that has lower electrical resistance than channel parts 17d, 26d, which are other portions of the oxide semiconductor film 31; the capacitor wiring 22 that is the low-resistance part being separated from the channel parts 17d, 26d that are the other portions of the oxide semiconductor film 31. The first interlayer insulation film 33 has an opening part 33a formed in a position overlapping the capacitor wiring 22 that is the low-resistance part. |
