| 摘要 |
PROBLEM TO BE SOLVED: To correctly evaluate the influence by the excess and defect of oxygen, etc. in a material including oxygen as a primary component, which has been difficult with an existing method for quantitative analysis used when evaluating a very small amount of oxygen in a material including oxygen as a primary component because of its several atomic% of uncertainty in the accuracy of quantity determination while it has been known by experience that a very small amount of excess of oxygen, defect thereof and the like in a stoichiometric composition effect a physical property of a material including oxygen as a primary component.SOLUTION: A method for evaluating an oxide semiconductor film comprises: the step of measuring, on a substrate having a first oxide film, and a second oxide film differing from the first oxide film in abundance ratio of oxygen isotopes, a quantitative value of one of the oxygen isotopes along a depth direction by secondary ion mass spectrometry, thereby evaluating the one oxygen isotope distributed from the first oxide film into the second oxide film.SELECTED DRAWING: None |
