| 摘要 |
The present disclosure relates to a semiconductor light emitting device. The semiconductor light emitting device comprises a plurality of semiconductor layers, a reflection layer, a first electrode, a second electrode, and a growth substrate included at an opposite side of the reflection layer with respect to the plurality of the semiconductor layers and having a hexahedral shape. The semiconductor light emitting device comprises a lower surface on which the plurality of the semiconductor layer is formed, an upper surface facing the lower surface, a surface for connecting the lower surface and the upper surface, and another surface for connecting the lower surface and the upper surface, an opposite surface of the surface, and another opposite surface of another surface. Another surface is longer than the surface. Another surface is cut in parallel with one among crystal surfaces of the growth substrate. The surface is cut not to be parallel with the crystal surfaces. The sum of distances from the surface and the opposite surface of the surface to the side surfaces of the semiconductor layers where are individually adjacent with the surface and the opposite surface individually is equal to or larger than the sum of distances from another surface and another opposite surface of another surface to the side surfaces of the semiconductor layers where are individually adjacent with another surface and another opposite surface of another surface. |
