AL-W-O STACK STRUCTURE APPLICABLE TO RESISTIVE RANDOM ACCESS MEMORY

摘要

An Al-W-O stack structure applicable to a resistive random access memory according to an embodiment of the invention comprises a tungsten top electrode, a tungsten oxide layer formed on the tungsten lower electrode, an aluminum oxide layer formed on the tungsten oxide layer and an aluminum top electrode formed on the aluminum oxide layer. The invention utilizes the different properties of two metals, namely aluminum and tungsten in bonding with oxygen ions, to obtain a resistive random access memory with more stable performances, lower power consumption and larger high resistance-low resistance ratio.

主权项

1. An Al-W-O stack structure applicable to a resistive random access memory, comprising:
a tungsten bottom electrode; a tungsten oxide layer formed on the tungsten lower electrode; an aluminum oxide layer formed on the tungsten oxide layer; and an aluminum top electrode formed on the aluminum oxide layer.