| 主权项 |
1. A diode integrated on a chip of semiconductor material having an anode surface and a cathode surface opposite to each other, the diode comprising:
a cathode region having a doping of a first type, the cathode region extending from the cathode surface in the chip, an drift region having a doping of the first type with a dopant concentration lower than a dopant concentration of the cathode region, the drift region extending between the anode surface and the cathode region, a plurality of anode regions having a doping of a second type, each anode region extending from the anode surface in the drift region, a cathode electrode of electrically conductive material on the cathode surface and electrically coupled with said cathode region, and an anode electrode of electrically conducting material, wherein: one or more contacted anode regions of said anode regions are electrically coupled with the anode electrode on the anode surface, and one or more floating anode regions of said anode regions are electrically insulated from the anode electrode, the diode being configured so that charge carriers are injected from said one or more floating anode regions into the drift region in response to a control voltage, applied between the anode electrode and the cathode electrode, exceeding a threshold voltage of the diode, wherein the anode regions are arranged in a matrix on the anode surface. |
