发明名称 EMBEDDED TUNGSTEN RESISTOR
摘要 A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.
申请公布号 US2016071839(A1) 申请公布日期 2016.03.10
申请号 US201514864538 申请日期 2015.09.24
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 McMullan Russell Carlton;Pushkarakshan Binu Kamblath;Narayan Subramanian J.;Sankaran Swaminathan;Kunz Keith Edmund
分类号 H01L27/06;H01L49/02;H01L29/872 主分类号 H01L27/06
代理机构 代理人
主权项 1. An integrated circuit, comprising: a substrate; a well formed in the substrate; a silicide active geometry formed in the well and establishing a diode structure with the well; and a tungsten resistor formed above the active silicide geometry.
地址 Dallas TX US