发明名称 |
EMBEDDED TUNGSTEN RESISTOR |
摘要 |
A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer. |
申请公布号 |
US2016071839(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
US201514864538 |
申请日期 |
2015.09.24 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
McMullan Russell Carlton;Pushkarakshan Binu Kamblath;Narayan Subramanian J.;Sankaran Swaminathan;Kunz Keith Edmund |
分类号 |
H01L27/06;H01L49/02;H01L29/872 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit, comprising:
a substrate; a well formed in the substrate; a silicide active geometry formed in the well and establishing a diode structure with the well; and a tungsten resistor formed above the active silicide geometry. |
地址 |
Dallas TX US |