Semiconductor Device and Manufacturing Method Thereof

摘要

It is possible to provide a semiconductor device which can be obtained at a high reliability by warping an insulating substrate stably into a convex shape while ensuring a close contact between a cooling member and the insulating substrate. The semiconductor device includes an insulating substrate, a semiconductor element disposed on a first surface of the insulating substrate, a case connected to the insulating substrate, and a resin filled inside the case. Assuming that the thickness of the insulating substrate is denoted by t1, the thickness of the resin is denoted by t2, the linear expansion coefficient of the insulating substrate is denoted by α1, and the linear expansion coefficient of the resin is denoted by α2, the relationship therebetween satisfies t2≧t1 and α2≧α1, and a second surface of the insulating substrate opposite to the first surface thereof is warped into a convex shape.

主权项

1. A semiconductor device comprising:
an insulating substrate; a semiconductor element disposed on a first surface of said insulating substrate; a case connected to said insulating substrate and configured to accommodate therein said semiconductor element; and a resin filled inside said case so as to bury said semiconductor element, assuming that the thickness of said insulating substrate is denoted by t1, the thickness of said resin is denoted by t2, the linear expansion coefficient of said insulating substrate is denoted by α1, and the linear expansion coefficient of said resin is denoted by α2, the relationship therebetween satisfying t2≧t1 and α2≧α1, and a second surface of said insulating substrate opposite to said first surface thereof being warped into a convex shape.