发明名称 |
GRAPHENE MATERIAL AND METHOD OF PREPARING THE SAME |
摘要 |
A method of preparing a graphene material. The method includes: (1) preparing a liquid polyacrylonitrile (LPAN) solution, stirring the LPAN solution to yield a cyclized polyacrylonitrile solution; (2) stirring the cyclized LPAN solution at between 200 and 300° C. to yield a thermally-oxidized polyacrylonitrile; (3) grinding and sieving the thermally-oxidized polyacrylonitrile, and drying a resulting product at room temperature, to yield a thermally-oxidized precursor; (4) calcining the thermally-oxidized precursor in the presence of an inert gas flow of between 10 and 500 mL/min for between 1 and 24 hrs at the temperature of between 400 and 1000° C., to yield a carbonized precursor; and (5) calcining the carbonized precursor in the presence of an inert gas flow of between 10 and 500 mL/min for between 1 and 10 hrs at the temperature of between 1000 and 3000° C., to yield a graphene material. |
申请公布号 |
US2016068396(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
US201514848274 |
申请日期 |
2015.09.08 |
申请人 |
LIU Jianhong |
发明人 |
LIU Jianhong;ZHANG Qianling;HE Chuanxin;XU Jian;HU Chao |
分类号 |
C01B31/04 |
主分类号 |
C01B31/04 |
代理机构 |
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代理人 |
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主权项 |
1. A method of preparing a graphene material, comprising:
(1) preparing a liquid polyacrylonitrile (LPAN) solution, stirring the LPAN solution at between 80 and 300° C. for between 8 and 72 hrs to yield a cyclized polyacrylonitrile solution; (2) stirring the cyclized LPAN solution at between 200 and 300° C. for between 1 and 10 hrs to yield a thermally-oxidized polyacrylonitrile comprising a ladder structure; (3) grinding and sieving the thermally-oxidized polyacrylonitrile, and drying a resulting product at room temperature, to yield a thermally-oxidized precursor; (4) calcining the thermally-oxidized precursor in the presence of an inert gas flow of between 10 and 500 mL/min for between 1 and 24 hrs at a temperature of between 400 and 1000° C., to yield a carbonized precursor; and (5) calcining the carbonized precursor in the presence of an inert gas flow of between 10 and 500 mL/min for between 1 and 10 hrs at a temperature of between 1000 and 3000° C., to yield a graphene material. |
地址 |
Shenzhen CN |