METHOD FOR MEASURING LEAKAGE CURRENT OF THIN FILM TRANSISTOR

摘要

The objective of the present invention is to provide a method for measuring a leakage current of a thin film transistor capable of accurately measuring a low leakage current. To achieve the objective, the method comprises: a step of connecting one end of a capacitor to a source electrode of the thin film transistor under an environment where a preset temperature is maintained, and of grounding the other end of the capacitor; a step of applying a drain voltage to a drain electrode of the thin film transistor and applying a gate voltage to a gate electrode of the thin film transistor; and a step of measuring the source voltage of the source electrode which changes over time in the gate voltage.