发明名称 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
摘要 PROBLEM TO BE SOLVED: To provide a polycrystalline silicon reaction furnace in which the peeling off of polycrystalline silicon precipitated on the surface of an electrode holding a silicon core rod can be prevented.SOLUTION: Provided is a polycrystalline silicon reaction furnace where a silicon core rod 4 provided at the inside of the furnace is conductively heated, and a raw material gas fed into the furnace is reacted to produce polycrystalline silicon on the surface of the silicon core rod 4, the bottom plate part (furnace bottom) 2 of the furnace is provided with an electrode holder 10 provided in an electrically insulating state to the bottom plate part 2 and a core rod holding electrode 15 connected to the electrode holder 10 and holding the silicon core rod 4 toward the upper part, and the outer circumferential face of the core rod holding electrode 15 is provided with a recessed part (male screw part) 15b exposed to the furnace atmosphere.SELECTED DRAWING: Figure 2
申请公布号 JP2016033112(A) 申请公布日期 2016.03.10
申请号 JP20150240934 申请日期 2015.12.10
申请人 MITSUBISHI MATERIALS CORP 发明人 ENDO TOSHIHIDE;TAKE MASAYUKI;ISHII TOSHIYUKI;SAKAGUCHI MASAAKI
分类号 C01B33/035 主分类号 C01B33/035
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