| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing device and a substrate processing method which are arranged to process a substrate by plasma.SOLUTION: The present invention relates to a substrate processing device and a substrate processing method. A substrate processing method according to an embodiment of the present invention comprises the steps of: providing a substrate arranged by alternately laminating an interlayer insulative layer and a sacrificing layer on polycrystalline silicon, in which holes are formed in the interlayer insulative layer and the sacrificing layer; supplying the substrate with a first step gas excited to a plasma state, thereby forming a protection layer on side faces and bottom faces of the holes, and the upper surface of the substrate; supplying the substrate with a second step gas excited to a plasma state, thereby removing the protection layer formed on the side face of each hole; supplying the substrate with a third step gas excited to a plasma state, thereby removing the sacrificing layer exposed from the side face of each hole; and supplying the substrate with a fourth step gas excited to a plasma state, thereby removing the protection layer on the upper surface of the substrate and the bottom face of each hole.SELECTED DRAWING: Figure 2 |
