| 摘要 |
PROBLEM TO BE SOLVED: To provide manufacturing methods of a high-quality p-type ZnO semiconductor layer and a high-quality ZnO semiconductor element.SOLUTION: A p-type ZnO semiconductor layer manufacturing method comprises the steps of: forming an Ag-containing n-type ZnO semiconductor single crystal structure (S102a); annealing the n-type ZnO semiconductor single crystal structure while irradiating Zn to form an Ag-doped p-type ZnO semiconductor layer (S102b); forming an n-type ZnO semiconductor layer on a substrate (S101); and forming a p-type ZnO semiconductor layer above the n-type ZnO semiconductor layer by the above-mentioned method (S102).SELECTED DRAWING: Figure 5 |
