发明名称 |
SEMICONDUCTOR DEVICE WITH AN ISOLATION GATE AND METHOD OF FORMING |
摘要 |
An embodiment includes a semiconductor device, comprising: a substrate; a continuous diffusion region disposed on the substrate; a first gate structure disposed on the continuous diffusion region; a second gate structure disposed on the continuous diffusion region; an isolation gate structure disposed between the first gate structure and the second gate structure and disposed adjacent to the both the first gate structure and the second gate structure; a first diffusion region of the continuous diffusion region disposed between the first gate structure and the isolation gate structure; a second diffusion region of the continuous diffusion region disposed between the second gate structure and the isolation gate structure; a conductive layer disposed on the first and second diffusion regions; and an isolation gate contact disposed over the isolation gate structure and electrically insulated from the first diffusion region. |
申请公布号 |
US2016071848(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
US201514834419 |
申请日期 |
2015.08.24 |
申请人 |
SENGUPTA Rwik;RODDER Mark S. |
发明人 |
SENGUPTA Rwik;RODDER Mark S. |
分类号 |
H01L27/088;H01L23/535;H01L21/8234;H01L29/06;H01L29/08 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a substrate; a continuous diffusion region disposed on the substrate; a first gate structure disposed on the continuous diffusion region; a second gate structure disposed on the continuous diffusion region; an isolation gate structure disposed between the first gate structure and the second gate structure and disposed adjacent to the both the first gate structure and the second gate structure; a first diffusion region of the continuous diffusion region disposed between the first gate structure and the isolation gate structure; a second diffusion region of the continuous diffusion region disposed between the second gate structure and the isolation gate structure; a conductive layer disposed on the first and second diffusion regions; and an isolation gate contact disposed over the isolation gate structure and electrically insulated from the first diffusion region. |
地址 |
Austin TX US |