| 发明名称 |
Through Via Structure and Method |
| 摘要 |
A device comprises a via in a substrate comprising a lower via portion with a first width formed of a first conductive material and an upper via portion with a second width greater than the first width, wherein the upper via portion comprises a protection layer formed of the first conductive material and a via fill material portion formed of a second conductive material. |
| 申请公布号 |
US2016071765(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201414478391 |
申请日期 |
2014.09.05 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Yung-Chi;Chang Hung-Pin;Wu Tsang-Jiuh;Chiou Wen-Chih |
| 分类号 |
H01L21/768;H01L21/306;H01L21/308;H01L27/088;H01L21/8238;H01L21/8234;H01L29/78;H01L23/538;H01L27/092 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a via in a substrate comprising:
a lower via portion with a first width formed of a first conductive material; andan upper via portion with a second width greater than the first width, wherein the upper via portion comprises:
a protection layer formed of the first conductive material; anda via fill material portion formed of a second conductive material. |
| 地址 |
Hsin-Chu TW |
