发明名称 ARC-PLASMA FILM FORMATION DEVICE
摘要 An arc-plasma film formation device includes a film formation chamber in which a substrate to be treated is stored, a plasma chamber in which at least a part of a target is stored, the plasma chamber being configured to be connected to the film formation chamber, and a plurality of hollow coils configured to generate a continuous line of magnetic force between the target and the film formation chamber and having at least one curved section, the plurality of hollow coils being arrange in the plasma chamber and covered by an outer coat made of a non-magnetic metal. Plasma containing ions derived from the target material and generated in the plasma chamber as a result of arc discharge is transported from the target to the substrate by passing an inside of the plurality of hollow coils.
申请公布号 US2016071702(A1) 申请公布日期 2016.03.10
申请号 US201314773573 申请日期 2013.10.29
申请人 Shimadzu Corporation 发明人 SUZUKI Masayasu;MORIMOTO Yosuke
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. An arc-plasma film formation device comprising: a film formation chamber in which a substrate to be treated is stored; a plasma chamber in which at least a part of a target is stored, the plasma chamber being configured to be connected to the film formation chamber; and a plurality of hollow coils configured to generate a continuous line of magnetic force having at least one curved section between the target and the film formation chamber, the plurality of hollow coils being arranged in the plasma chamber and covered by an outer coat made of a non-magnetic metal, wherein plasma containing ions derived from the target material and generated inside the plasma chamber as a result of arc discharge is transported from the target to the substrate by passing through an inside of the plurality of hollow coils.
地址 Kyoto-shi JP