DEVICE AND METHOD FOR WRITING DATA TO A RESISTIVE MEMORY

摘要

The invention relates to a resistive memory (5) including resistive elements, the resistance of each resistive element being capable of alternating between a high value in a first range of values and a low value in a second range of values smaller than the high value, the memory further comprising a device (14) for switching the resistance of at least one resistive element selected from among the resistive elements between the high and low values, the device including a first circuit capable of applying an increasing voltage across the selected resistive element while the selected resistive element is at the high value or at the low value, a second circuit capable of detecting the switching of the resistance of the selected resistive element, and a third circuit capable of interrupting the current flowing through the selected resistive element on detection of the switching.

主权项

1. A resistive memory comprising resistive elements arranged in rows an in columns, the columns being distributed in groups of columns, the resistance of each resistive element being capable of alternating between a high value in a first range of values and a low value in a second range of values smaller than the high value, the memory further comprising a device for switching, for each group, the resistance of at least one resistive element selected from among the resistive elements of said group between the high and low values, the device comprising a first circuit connected to all columns and capable of applying an increasing voltage across each selected resistive element while the selected resistive element is at the high value or at the low value, for each group, a second circuit capable of detecting the switching of the resistance of the selected resistive element and, for each group, a third circuit capable of interrupting the current flowing through the selected resistive element of said group on detection of the switching.