| 发明名称 |
POLISHING COMPOSITIONS AND METHODS FOR POLISHING COBALT FILMS |
| 摘要 |
The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax−6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range. |
| 申请公布号 |
US2016068710(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201414478508 |
申请日期 |
2014.09.05 |
| 申请人 |
Fujifilm Planar Solutions, LLC |
发明人 |
Wang Luling;Mishra Abhudaya;Mahulikar Deepak;Wen Richard |
| 分类号 |
C09G1/02;H01L21/321;H01L21/3105 |
主分类号 |
C09G1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A polishing composition for polishing cobalt containing material, comprising:
a) an abrasive; b) a weak acid removal rate enhancer; c) an azole-containing corrosion inhibitor; and d) a pH adjuster; wherein said removal rate enhancer, said corrosion inhibitor, and said pH adjuster each have a pKa between 1 and 18, and wherein the pH of the composition is between 7 and 12, and wherein the composition has less than about 100 parts per million of sulfate ions and less than about 100 parts per million of halide ions, each based on the total weight of the composition. |
| 地址 |
North Kingstown RI US |
