LIQUID PROCESSING METHOD FOR SUBSTRATE AND LIQUID PROCESSING APPARATUS

摘要

The present invention relates to a device for etching and cleaning a substrate for a semiconductor. A liquid processing method comprises: a first liquid processing step of liquid-processing a processing surface at a first temperature by heating at least one of a substrate or processing liquid while rotating the substrate; a second liquid processing step of liquid-processing the processing surface at a second temperature lower than the first temperature by supplying the processing liquid; and a rinse step of cleaning the processing surface by supplying rinse liquid. Therefore, the method prevents particles due to a viscosity increase of the processing liquid when the processing liquid is rapidly cooled in case of a high temperature liquid processing process, thereby preventing damage due to thermal deformation caused by rapid cooling of the substrate.