| 摘要 |
FIELD: electricity.SUBSTANCE: invention is referred to the sphere of electric engineering, and to capacitors with porous plates having open porous structure. The structure is suggested for energy storage in the device, comprised of the first polycrystalline substrate with gain size at which phonon scattering starts dominating over scattering at grain junction line in polycrystalline substrate, at that the first porous layer is formed inside the first polycrystalline substrate and this first porous layer contains multitude of channels. The method is also suggested for manufacturing of the device for energy storage with defined size of crystal grain at which phonon scattering starts dominating over scattering at grain junction line at such grain size, thereafter porous layer is formed inside the polycrystalline substrate, wherein porous layer contains multitude of channels, and the energy storage device itself with such structure at the polycrystalline substrate.EFFECT: reduced resistance of the polycrystalline substrate and as result reduced ohmic losses during charge and discharge of electric double layer capacitor (EDLC).30 cl, 11 dwg |
