| 发明名称 |
DOUBLE-SOURCE SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device may include a first source layer, a first insulating layer located over the first source layer, and a first stacked structure located over the first insulating layer. The semiconductor device may include first channel layers passing through the first stacked structure and the first insulating layer. The semiconductor device may include a second source layer including a first region interposed between the first source layer and the first insulating layer and second regions interposed between the first channel layers and the first insulating layer, wherein the second regions of the second source layer directly contact each other. |
| 申请公布号 |
US2016071881(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514945024 |
申请日期 |
2015.11.18 |
| 申请人 |
SK hynix Inc. |
发明人 |
LEE Ki Hong;PYI Seung Ho;BAEK Ji Yeon |
| 分类号 |
H01L27/115;H01L29/10;H01L29/45;H01L29/08 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first source layer; a first insulating layer located over the first source layer; a first stacked structure located over the first insulating layer; first channel layers passing through the first stacked structure and the first insulating layer; and a second source layer including a first region interposed between the first source layer and the first insulating layer and second regions interposed between the first channel layers and the first insulating layer, wherein the second regions of the second source layer directly contact each other. |
| 地址 |
Icheon-si KR |
