| 主权项 |
1. A semiconductor memory device comprising:
a multilayer body including a plurality of electrode layers stacked via an insulating layer; a plurality of memory strings arranged in a first direction and a second direction, the first direction being orthogonal to a stacking direction of the multilayer body, and the second direction being orthogonal to the stacking direction and the first direction; a plurality of source layers extending in the second direction on the memory string and separated in the first direction; and a plurality of bit lines extending in the first direction on the memory string and separated in the second direction, each of the memory strings including:
a first columnar part including a first channel body extending in the stacking direction, and a first charge storage film provided between the first channel body and the electrode layers;a second columnar part including a second channel body extending in the stacking direction, and a second charge storage film provided between the second channel body and the electrode layer, the second columnar part being provided adjacent in the first direction to the first columnar part; anda connection part connecting a lower end of the first channel body and a lower end of the second channel body, each of the source layers being connected to an upper end of the first columnar part, and each of the bit lines being connected to an upper end of the second columnar part of every (n+1)-th memory string (n being an integer of 1 or more) of a plurality of memory strings arranged in the first direction. |
