MANUFACTURING METHOD OF MAGNETIC MEMORY DEVICE

摘要

According to one embodiment, a manufacturing method of a magnetic memory device, includes obtaining first and second magnetic fields for each of magnetoresistive effect elements, defining a group of the elements, for the first and second magnetic fields of the elements in the group, a highest first magnetic field being lower than a lowest second magnetic field, and a difference between the highest first magnetic field and the lowest second magnetic field being greater than a predetermined difference, determining a maximum applied magnetic field higher than the highest first magnetic field and lower than the lowest second magnetic field, and obtaining magnetic characteristics for each of the elements in the group by applying a magnetic field decreasing from the maximum applied magnetic field after the magnetic field is increased up to the maximum applied magnetic field.

主权项

1. A manufacturing method of a magnetic memory device comprising a plurality of magnetoresistive effect elements, each of which comprises a storage layer, a reference layer and a tunnel barrier layer provided between the storage layer and the reference layer, when an applied magnetic field is increased, the magnetoresistive effect elements being in a first resistance state if the applied magnetic field is lower than a first magnetic field, the magnetoresistive effect elements being in a second resistance state having a resistance greater than a resistance of the first resistance state if the applied magnetic field is higher than the first magnetic field and lower than a second magnetic field, and the magnetoresistive effect elements being in a third resistance state having a resistance less than the resistance of the second resistance state if the applied magnetic field is higher than the second magnetic field,
the method comprising: obtaining the first and second magnetic fields for each of the magnetoresistive effect elements; defining a group of the magnetoresistive effect elements, for the first and second magnetic fields of the magnetoresistive effect elements in the group, a highest first magnetic field being lower than a lowest second magnetic field, and a difference between the highest first magnetic field and the lowest second magnetic field being greater than a predetermined difference; determining a maximum applied magnetic field higher than the highest first magnetic field and lower than the lowest second magnetic field; and obtaining magnetic characteristics for each of the magnetoresistive effect elements in the group by applying a magnetic field decreasing from the maximum applied magnetic field after the magnetic field is increased up to the maximum applied magnetic field.