PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

摘要

A plasma processing apparatus includes a processing chamber. A turntable to receive a substrate thereon is provided in the processing chamber. A first plasma processing area is provided in a predetermined location in a circumferential direction of the turntable and configured to perform a first plasma process by generating first plasma from a first plasma gas. A second plasma processing area is provided apart from the first plasma processing area in the circumferential direction of the turntable and configured to perform a second plasma process by generating second plasma from a second plasma gas. A separation area is provided in each of two locations between the first plasma processing area and the second plasma processing area and configured to prevent the first plasma gas and the second plasma gas from mixing with each other by separating the first plasma processing area from the second plasma processing area.

主权项

1. A plasma processing apparatus comprising:
a processing chamber; a turntable to receive a substrate thereon provided in the processing chamber; a first plasma processing area provided in a predetermined location in a circumferential direction of the turntable and configured to perform a first plasma process by generating first plasma from a first plasma gas; a second plasma processing area provided apart from the first plasma processing area in the circumferential direction of the turntable and configured to perform a second plasma process by generating second plasma from a second plasma gas; and a separation area provided in each of two locations between the first plasma processing area and the second plasma processing area and configured to prevent the first plasma gas and the second plasma gas from mixing with each other by separating the first plasma processing area from the second plasma processing area.