| 摘要 |
A field effect diode and a manufacturing method therefor. The field effect diode sequentially comprises a substrate (12), a nucleating layer (13), a back barrier layer (15), a channel layer (16), a first barrier layer (17) and a second barrier layer (18). A groove, an anode and a cathode are formed in the second barrier layer (18). The cathode is an ohmic contact electrode (20). The anode is of a composite structure consisting of an ohmic contact electrode (19) and a schottky electrode (21) that is located in the groove and is connected to the ohmic contact electrode (19) in a short circuit mode. The first barrier layer (17) and the back barrier layer (15) have similar constituent contents, the second barrier layer (18) is different from the first barrier layer (17) in constituent content, and the lattice constant of the second barrier layer (18) is smaller than that of the first barrier layer (17). The field effect diode has small forward conduction voltage drop, small reverse leakage current and large breakdown voltage. |
