| 摘要 |
PROBLEM TO BE SOLVED: To provide excellent inherent characteristics of graphene, in a structure in which graphene is formed on a surface where an SiC surface is terminated with hydrogen atoms.SOLUTION: A carbon buffer layer with a 6√3×6√3 structure is formed on a surface of an SiC substrate by heating the SiC substrate in a step S101 (the first step). Next in a step S102, hydrogen is supplied to the surface of the SiC substrate with the carbon buffer layer formed thereon in a state in which the SiC substrate is heated, graphene is formed by cutting the bond between the carbon buffer layer and Si on the substrate side, and a dangling bond of Si existing between graphene and the SiC substrate is terminated by hydrogen (the second step). After forming graphene in this way, in a step S103, a hydrocarbon existing on the substrate side of graphene is removed by heating the SiC substrate with graphene formed thereon in a vacuum (the third step). |
