| 摘要 |
852,003. Semi-conductor devices. SIEMENS EDISON SWAN Ltd. May 22, 1959 [June 10, 1958], No. 18536/58. Class 37 A slice of monocrystalline germanium or other semi-conductor is separated into sections by scribing lines on the slice and then etching with an etchant which preferentially attacks the strained regions of the semi-conductor. The etchant may consist of equal proportions of hydrogen peroxide and potassium hydroxide, and used at 70‹ to 80‹C. The scribing may be performed by means of a diamond probe, and a plurality of slices may be processed simultaneously. Fig. 2 shows a pattern of scribed lines on a crystal, and Fig. 3 the position after etching has taken place. |
