发明名称 METHOD OF FABRICATING INTERCONNECTION STRUCTURE
摘要 Disclosed is a method for forming a connection wiring structure. The method forms a first recess unit including a first nest shaped recess unit having a first line width on a dielectric layer and a first linear shaped recess unit having a second line width which is smaller than the first line width and forms a guide spacer layer on a side wall of the first recess unit to provide a second recess unit including a second nest shaped recess unit having a third line width which is smaller than the first line width. The method applies a self assembling block copolymer, and selectively removes a polymer block domain unit after inducing the formation of a polymer block matrix unit and a cylindrical polymer block domain unit surrounding the same by annealing the self assembling block copolymer. The method etches via cavity by using the polymer block matrix unit as an etching mask.
申请公布号 KR20160026456(A) 申请公布日期 2016.03.09
申请号 KR20140115388 申请日期 2014.09.01
申请人 SK HYNIX INC. 发明人 BAN, KEUN DO;BOK, CHEOL KYU;YOO, MIN AE;PARK, JONG CHEON
分类号 H01L21/768;H01L21/027;H01L21/60 主分类号 H01L21/768
代理机构 代理人
主权项
地址