| 摘要 |
A method for growing a silicon single crystal by a Czochralski method, includes: conducting preliminary examination of growth conditions under which crystal collapse does not occur, the preliminary examination being based on a correlation between presence or absence of the crystal collapse in the silicon single crystal and a position at which an internal stress in the crystal when the silicon single crystal is grown will exceed a prescribed threshold, the position being away from a crystal growth interface; and growing the silicon single crystal in accordance with the growth conditions under which the crystal collapse does not occur, the growth conditions being determined from the preliminary examination. The method can grow a silicon single crystal while crystal collapse is effectively prevented. |
