| 摘要 |
There are disclosed herein various implementations of a monolithic vertically integrated composite device. Such a composite device may include one or more group IV device fabricated in a group IV semiconductor body formed over a first side of a double sided substrate, and one or more group III-V device fabricated in a group III-V semiconductor body formed over a second side of the double sided substrate opposite the first side. In one implementation, the one or more group IV device may be a PN junction diode or a Schottky diode. In another implementation, the one or more group IV device may be a field-effect transistor (FET). In yet another implementation, such a composite device monolithically integrates one or more group III-V device and a group IV integrated circuit (IC). The one or more group III-V device and one or more group IV device and/or IC may be electrically coupled using one or more of a substrate via and a through-wafer via. |
