GATE DRIVER PROTECTION APPARATUS OF INSULATED GATE BIPOLAR TRANSISTOR

摘要

The present invention relates to an IGBT gate driver protection apparatus. The present invention is configured to comprise: a first transistor of which a high level supply voltage is applied to a drain and a source is connected to a gate of the IGBT; a second transistor of which a drain is commonly connected to the source of the first transistor and the gate of the IGBT and a low level supply voltage is applied to a source; an output voltage comparator which is fed back the output voltage applied to the gate of the IGBT and compares the output voltage with a predetermined high level supply voltage and low level supply voltage; and an overcurrent block switch unit which blocks an overcurrent flowed into the IGBT, the first and second transistor by blocking the current supplied to the IGBT when the output voltage is lower than the high level reference voltage or higher than the low level reference voltage based on a comparing result by the output voltage comparator. According to the present invention, there is an effect which enables safely protecting a power system using IGBT, extending a lifetime of a component by normally monitoring a voltage of an output of the IGBT gate driver and blocking in advance an overcurrent to be flowed as a load impedance of the IGBT gate driver is lowered abnormally or short and so on is occurred.