| 摘要 |
Provided is a gas barrier film including a base, a first barrier layer containing silicon which is formed on at least one surface of the base, and a second barrier layer containing silicon oxynitride which is formed on the first barrier layer. The water vapor transmission rate (g/m 2 /day) at 40°C and 90% RH in a structure in which the first barrier layer is formed on the base is R 1 and the water vapor transmission rate (g/m 2 /day) at 40°C and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is R 2 , and the ratio of the water vapor transmission rate R 1 to the water vapor transmission rate R 2 (R 1 /R 2 ) is 80 or more and 5000 or less. Hereby, excellent barrier performance can be exhibited under a high-temperature and high-humidity environment. |
