| 摘要 |
PROBLEM TO BE SOLVED: To provide a Cu-Ga alloy target with a Ga concentration range of 25-35 at%, which causes no cracks and has a decreased pore (a vacancy or a void).SOLUTION: A cylindrical Cu-Ga alloy sputtering target is produced by melting and casting at a melting temperature of the melting temperature of the alloy or 100°C more and 1100°C or less, preferably 1040°C or less, and at a vacuum degree of 5.0×10-2 torr or less, preferably 5.0×10torr or less. If the cylindrical sputtering target is sliced, it is obtained that the number of pores having a circle-equivalent diameter of 50 μm or more on a cross-sectional plane is 0.3 peaces/cmor less. |
