APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL
摘要
An apparatus (10) for producing an SiC single crystal is used in the solution growth method. The apparatus (10) for producing an SiC single crystal includes a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is to be attached. The crucible (14) holds an Si-C solution (15). The seed shaft (28) includes a cylinder part (28A), a bottom part (28B), and a low heat conductive member (28C). The bottom part (28B) is located at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low heat conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than that of the bottom part (28B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.
申请公布号
EP2876189(A4)
申请公布日期
2016.03.09
申请号
EP20130819242
申请日期
2013.07.10
申请人
NIPPON STEEL & SUMITOMO METAL CORPORATION;TOYOTA JIDOSHA KABUSHIKI KAISHA