发明名称 |
GALLIUM NITRIDE FIELD EFFECT TRANSISTOR |
摘要 |
A semiconductor device may be formed by forming a silicon-containing gate dielectric layer over a semiconductor layer. A gate metal layer is formed over the gate dielectric layer; the gate metal layer includes 2 atomic percent to 10 atomic percent silicon during formation. The gate metal layer is patterned to form a metal gate. Source and drain contact holes are subsequently formed, and contact metal is formed and patterned in the contact holes. A subsequent contact anneal heats the contact metal and gate for at least 30 seconds at a temperature of at least 750° C. |
申请公布号 |
EP2992557(A1) |
申请公布日期 |
2016.03.09 |
申请号 |
EP20140792233 |
申请日期 |
2014.05.05 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HAIDER, ASAD, MAHMOOD;JOH, JUNGWOO |
分类号 |
H01L29/772;H01L21/335 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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