METHOD OF SELECTIVELY REMOVING SILICON NITRIDE AND SINGLE WAFER ETCHING APPARATUS THEREOF

摘要

A method of selectively removing silicon nitride is provided. The method comprises: a step of providing a wafer having silicon nitride on a surface thereof; a step of providing a mixture of phosphoric acid and a silicon-containing material; and a step of delivering the mixture to the surface of the wafer to remove the silicon nitride. A single wafer etching apparatus for selectively removing silicon nitride is also provided.