发明名称 SEMICONDUCTOR DEVICE AND MANUFATURING METHOD THEREOF
摘要 The present invention provides a semiconductor device which has a stable structure, and a manufacturing method thereof. The semiconductor device includes: a stacked structure including conductive films and insulation films which are alternately stacked; semiconductor patterns penetrating through the stacked structure; and contact plugs which are connected to the conductive films respectively. Each conductive film includes a first region having a first thickness, and a second region which is connected to the first region and has a second thickness thicker than the first thickness. A second region of a lower conductive film is located on a lower part of a second region of an upper conductive film.
申请公布号 KR20160025866(A) 申请公布日期 2016.03.09
申请号 KR20140113298 申请日期 2014.08.28
申请人 SK HYNIX INC. 发明人 HYUN, CHAN SUN
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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