发明名称 半導体記憶装置
摘要 A semiconductor storage device which stops and resumes the supply of power supply voltage without the necessity of saving and returning a data signal between a volatile storage device and a nonvolatile storage device is provided. In the nonvolatile semiconductor storage device, the volatile storage device and the nonvolatile storage device are provided without separation. Specifically, in the semiconductor storage device, data is held in a data holding portion connected to a transistor including a semiconductor layer containing an oxide semiconductor and a capacitor. The potential of the data held in the data holding portion is controlled by a data potential holding circuit and a data potential control circuit. The data potential holding circuit can output data without leaking electric charge, and the data potential control circuit can control the potential of the data held in the data holding portion without leaking electric charge by capacitive coupling through the capacitor.
申请公布号 JP5882824(B2) 申请公布日期 2016.03.09
申请号 JP20120099378 申请日期 2012.04.25
申请人 株式会社半導体エネルギー研究所 发明人 米田 誠一;小林 英智
分类号 H03K3/356;H01L21/8234;H01L21/8242;H01L21/8246;H01L27/06;H01L27/08;H01L27/088;H01L27/10;H01L27/105;H01L27/108;H01L29/786 主分类号 H03K3/356
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