发明名称 レジスト下層膜形成用組成物、及びパターン形成方法
摘要 The present invention provides a silicon-containing surface modifier wherein the modifier contains one or more of a repeating unit shown by the following general formula (A) and a partial structure shown by the following general formula (C).The present invention has an object to provide a resist underlayer film applicable not only to a negatively developed resist pattern formed by a hydrophilic organic compound but also to a conventional positively developed resist pattern formed by a hydrophobic compound.
申请公布号 JP5882776(B2) 申请公布日期 2016.03.09
申请号 JP20120029228 申请日期 2012.02.14
申请人 信越化学工業株式会社 发明人 荻原 勤;上田 貴史;種田 義則
分类号 G03F7/11;C08G77/04;C08G77/14;G03F7/038;G03F7/039;H01L21/027 主分类号 G03F7/11
代理机构 代理人
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