| 发明名称 |
Nanostructures and nanofeatures with Si (111) planes on Si (100) wafers for III-N epitaxy |
| 摘要 |
A fin over an insulating layer on a substrate having a first crystal orientation is modified to form a surface aligned along a second crystal orientation. A device layer is deposited over the surface of the fin aligned along the second crystal orientation. |
| 申请公布号 |
GB2529953(A) |
申请公布日期 |
2016.03.09 |
| 申请号 |
GB20150020313 |
申请日期 |
2013.06.28 |
| 申请人 |
INTEL CORPORATION |
发明人 |
SANSAPTAK DASGUPTA;HAN WUI THEN;SANAZ K GARDNER;BENJAMIN CHU-KUNG;MARKO RADOSAVLJEVIC;SEUNG HOON SUNG;ROBERT S CHAU |
| 分类号 |
H01L21/02;H01L21/203 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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