| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a leakage current through a parasitic diode. <P>SOLUTION: A semiconductor device 1 comprises: a semiconductor layer 13 of a nitride semiconductor having a c-plane as a surface; and a p-type buried layer 14 of a nitride semiconductor having a thickness decreasing part 14a in which a thickness decreases. A part having a peak oxygen concentration is included in the thickness decreasing part 14a, and a part having a concentration of a p-type impurity between the peak part and an inclined plane of the thickness decreasing part 14a, which is higher than the oxygen concentration is included in the buried layer 14. <P>COPYRIGHT: (C)2013,JPO&INPIT |
