发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME |
摘要 |
In a method for producing an SiC semiconductor device, a p type layer (31) is formed in a trench (6) by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer (7). That is, a portion of the p type layer (31) formed on a side surface of the trench (6) is removed. Thus, the p type SiC layer (7) can be formed without depending on diagonal ion implantation. Since it is not necessary to separately perform the diagonal ion implantation, it is less likely that a production process will be complicated due to transferring into an ion implantation apparatus, and thus manufacturing costs reduce. Since there is no damage due to a defect caused by the ion implantation, it is possible to reduce a drain leakage and to reliably restrict the p type SiC layer (7) from remaining on the side surface of the trench (6). Accordingly, it is possible to produce an SiC semiconductor device that can achieve both high withstand voltage and high switching speed. |
申请公布号 |
EP2863417(A4) |
申请公布日期 |
2016.03.09 |
申请号 |
EP20130804396 |
申请日期 |
2013.06.06 |
申请人 |
DENSO CORPORATION;TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
TAKEUCHI, YUICHI;SOEJIMA, NARUMASA;WATANABE, YUKIHIKO;CHIDA, KAZUMI |
分类号 |
H01L21/336;H01L29/06;H01L29/12;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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