| 摘要 |
A semiconductor device (500) includes a cell field (610) which includes multiple field electrode structures (160) and cell mesas (170). The field electrode structures (160) are aligned in lines. The cell mesas (170) separate the adjacent field electrode structures of the field electrode structures (160) from each other. Each of the field electrode structures (160) includes a field electrode (165) and a field dielectric (161) which separates the field electrode (165) from a semiconductor main body (100). A termination structure (180) encloses the cell field (610), is extended from a first surface (101) to the inside of the semiconductor main body (100) and includes a termination electrode (185) and a termination dielectric (181) which separates the termination electrode (185) from the semiconductor main body (100). The termination dielectrics (181) and the field dielectrics (161) have an identical thickness. A termination mesa (190), which is wider than the cell mesas (170), separates the termination structure (180) from the cell field (610). |
