| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent occurrence of uneven film thickness due to intervention of dust or installation failure of a susceptor, in a vapor phase growth apparatus in which a plurality of substrates are mounted on the susceptor and a thin film is grown on the plurality of substrates at a time. <P>SOLUTION: A vapor phase growth apparatus 1 in which a plurality of substrates are mounted on a rotatable and detachable susceptor 5 and a compound semiconductor thin film is grown on each substrate includes a susceptor mounting determination device 3 for determining the mounting state of the susceptor 5. The susceptor mounting determination device 3 includes a position measurement device 22 for measuring at least two height positions of the rotating susceptor 5, and determination means 47 for determining whether or not the height position and inclination of the susceptor 5 fall within a predetermined range of tolerance by receiving measurement values from the position measurement device 22. <P>COPYRIGHT: (C)2013,JPO&INPIT |
