发明名称 |
BONDING WIRE FOR USE WITH SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAID BONDING WIRE |
摘要 |
Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis "a" and a short axis "b" of 10 or more and with an area of 15 µm 2 or more ("fiber texture"), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%. During the drawing steep, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges. |
申请公布号 |
EP2993693(A1) |
申请公布日期 |
2016.03.09 |
申请号 |
EP20150773517 |
申请日期 |
2015.03.31 |
申请人 |
NIPPON MICROMETAL CORPORATION;NIPPON STEEL & SUMIKIN MATERIALS CO., LTD. |
发明人 |
YAMADA, TAKASHI;ODA, DAIZO;OISHI, RYO;HAIBARA, TERUO;UNO, TOMOHIRO |
分类号 |
H01L21/60;B21C1/00;B23K35/02;B23K35/30;C22C5/06;C22C5/08;C22F1/00;C22F1/14;H01L23/00 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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