PHOTHOELECTRIC CONVERSION DEVICE AND IMAGE SENSOR HAVING THE SAME

摘要

An image sensor includes a second photoelectric conversion device including a first transparent electrode layer, an active layer and a second transparent electrode layer. A light with a wavelength of 440-480 nm is absorbed within the 1/5 depth of the total thickness of the active layer from both surfaces of the active layer. The present invention can suppress variation external quantum efficiency (EQE) of a green light sensitive photoelectric conversion device according to a bias voltage.